Samsung Electronics’ Hwaseong campus in South Korea will be the location for the company’s joint research centre with SAP, where engineers will conduct R&D for next-generation in-memory computing technologies.
SAP Asia Pacific Japan president Adaire Fox-Martin and Dr Young-Hyun Jun, president of Samsung Electronics’ Memory business, opened the research centre this week.
The establishment of the centre is part of an extended partnership between the two companies to develop more advanced in-memory technology by conducting research into next-generation DRAM for customer solutions and working together on their commercialisation.
Via the centre, Samsung and SAP will provide global customers with optimised solutions through technical support including test runs of the SAP HANA platform and evaluation of Samsung’s latest high-density memory solutions.
The server system at the new centre uses a 24-terabyte in-memory platform, based on Samsung’s 128-gigbyte DDR4 3DS DRAM modules fabricated on the 20-nanometer process node. The companies plan to apply 10nm-class 256GB 3DS DRAM modules next year to overall the system’s performance and power efficiency – expected to lead to an in-memory system that will offer even greater return on investment for Samsung and SAP customers.
“With our latest 10nm-class DRAM technology, Samsung Electronics will be able to provide more advanced solutions for SAP’s next-generation in-memory system in a highly efficient manner,” said Jun. “Samsung will continue solidifying its technology leadership in the high-density memory market through ongoing innovation.”
“Together with Samsung Electronics, we will develop the next generation of in-memory solutions for customers using the SAP HANA platform. This collaboration with Samsung extends our partnership and represents our commitment to drive innovation and help our customers win in the digital economy,” said Fox-Martin.